Infineon BSM35GD120DN2E3224: A 35A 1200V IGBT Module for High-Performance Power Conversion
The Infineon BSM35GD120DN2E3224 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module engineered to meet the rigorous demands of modern power electronic systems. Combining robust current handling, high voltage blocking capability, and advanced packaging, this module is a pivotal component for designers seeking efficiency and reliability in industrial and renewable energy applications.
At its core, the module features a TrenchStop™ IGBT7 technology, Infineon's latest generation IGBT innovation. This technology is instrumental in achieving an optimal balance between low saturation voltage (VCE(sat)) and minimal switching losses. The result is significantly reduced total power dissipation across the entire operational range, leading to higher system efficiency and allowing for more compact thermal management solutions. The module's rating of 35 Amperes continuous current and 1200 Volts blocking voltage makes it exceptionally suited for a wide array of high-power circuits, including motor drives, uninterruptible power supplies (UPS), solar inverters, and industrial welding equipment.
A key attribute of the BSM35GD120DN2E3224 is its low inductance module design. The internal layout is optimized to minimize parasitic inductance, which is crucial for suppressing voltage overshoot during the fast switching events characteristic of IGBT7 technology. This not only enhances the module's reliability by reducing stress on the semiconductor dies but also simplifies snubber circuit design, potentially lowering overall system cost and complexity.
Furthermore, the module is built with ruggedness in mind. It offers excellent short-circuit robustness (tsc = 3µs), providing a critical safety margin in fault conditions. The integrated NTC thermistor facilitates accurate temperature monitoring, enabling proactive thermal management and system protection. The use of AL2O3 (Alumina) ceramic substrates ensures high dielectric strength and efficient thermal conductivity, transferring heat effectively to the baseplate for dissipation.
Designed for easy integration, the module features a press-fit pin design for solder-free mounting, streamlining the production process and enhancing long-term mechanical reliability.
ICGOODFIND: The Infineon BSM35GD120DN2E3224 stands out as a superior solution for high-power conversion, masterfully balancing high efficiency, switching speed, and system ruggedness. Its advanced IGBT7 chip technology and low-inductance package make it an ideal choice for next-generation industrial drives and renewable energy systems where performance and density are paramount.
Keywords: IGBT Module, High-Performance, TrenchStop™ Technology, Power Conversion, 1200V.
