Infineon PVDZ172N: Advanced Automotive Power MOSFET for High-Efficiency Applications

Release date:2025-11-05 Number of clicks:144

Infineon PVDZ172N: Advanced Automotive Power MOSFET for High-Efficiency Applications

The continuous evolution of automotive electronics demands components that deliver superior performance, reliability, and efficiency. Addressing these needs, Infineon Technologies introduces the PVDZ172N, a state-of-the-art power MOSFET engineered specifically for high-efficiency automotive applications. This device exemplifies the intersection of cutting-edge semiconductor technology and the rigorous requirements of modern vehicle systems.

Designed with Infineon’s advanced OptiMOS™ technology, the PVDZ172N offers exceptionally low on-state resistance (RDS(on)) combined with high current handling capability. This results in minimal conduction losses, making it ideal for high-power switching applications where energy efficiency is critical. The MOSFET operates with high switching speeds, further reducing power dissipation and contributing to overall system efficiency.

A key strength of the PVDZ172N is its robustness and reliability in harsh automotive environments. It is qualified according to the stringent AEC-Q101 standard, ensuring it can withstand the temperature fluctuations, mechanical stress, and electrical surges typical in automotive systems. Its low thermal resistance and high avalanche ruggedness enhance its durability, providing long-term performance in demanding conditions such as electric power steering (EPS), braking systems, DC-DC converters, and onboard chargers.

The device also features a compact and space-saving package, which is crucial for modern automotive designs where PCB real estate is limited. This allows engineers to create more compact and lightweight systems without compromising on power or performance.

ICGOOODFIND: The Infineon PVDZ172N power MOSFET stands out as a superior solution for automotive designers seeking to enhance efficiency, reliability, and power density in next-generation vehicle applications.

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Keywords:

Automotive MOSFET

OptiMOS™ Technology

High Efficiency

AEC-Q101 Qualified

Low RDS(on)

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