Infineon IPB033N10N5LFATMA1 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electrical systems demands power semiconductors that deliver exceptional performance. The Infineon IPB033N10N5LFATMA1, a 100V N-channel power MOSFET from the advanced OptiMOS™ 5 technology family, stands out as a premier solution engineered to meet these challenges. This device is specifically designed to minimize power losses and maximize thermal performance in a wide array of power conversion applications.

A key differentiator of the OptiMOS™ 5 platform is its superior figure-of-merit (FOM), which combines low gate charge (Qg) and exceptionally low on-state resistance (RDS(on)). The IPB033N10N5LFATMA1 boasts a maximum RDS(on) of just 3.3 mΩ at 10 V, significantly reducing conduction losses. This allows for more current to be handled in a given size or, conversely, enables a more compact design for the same output power. The low gate charge ensures swift switching transitions, which is critical for high-frequency operation. Reduced switching losses directly translate into higher efficiency, particularly in switch-mode power supplies (SMPS) and DC-DC converters operating at frequencies above 100 kHz.

The benefits of these characteristics are most evident in applications such as:

Server & Telecom SMPS: Where achieving 80 Plus Titanium efficiency standards is paramount.

Synchronous Rectification: The low RDS(on) is ideal for replacing Schottky diodes in secondary-side rectification, drastically improving efficiency.

Motor Control and Drives: Providing robust and efficient switching for industrial brushless DC (BLDC) motors.

Solar Inverters and Battery Management Systems (BMS): Where low losses contribute to higher overall system energy harvest and runtime.

Housed in an Infineon’s proprietary SuperSO8 package (PG-TDSON-8), this MOSFET offers an excellent power-to-size ratio. The package features an exposed top-side cooling pad that provides superior thermal connectivity to the PCB or an external heatsink. This enhanced thermal management capability allows designers to push power limits or further shrink the form factor of their end products without compromising reliability.

ICGOOODFIND: The Infineon IPB033N10N5LFATMA1 OptiMOS™ 5 MOSFET is a benchmark device for engineers focused on maximizing efficiency and power density. Its industry-leading combination of ultra-low on-resistance, fast switching speed, and superior thermal performance makes it an optimal choice for the most demanding high-frequency power conversion designs across industrial, computing, and renewable energy sectors.

Keywords: OptiMOS™ 5, Low RDS(on), High-Efficiency, Power Density, Synchronous Rectification.