Infineon IPP60R190C6 600V 19A CoolMOS Power Transistor: Performance and Application Analysis
The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of MOSFET technology. Among the leading solutions in the high-voltage domain is Infineon's IPP60R190C6, a 600V, 19A CoolMOS Power Transistor built on the revolutionary Superjunction (SJ) principle. This device exemplifies the significant strides made in reducing switching losses and conduction resistance, making it a cornerstone for modern switch-mode power supplies (SMPS) and other demanding applications.
Unpacking the Core Performance Metrics
The IPP60R190C6 is characterized by its exceptionally low on-state resistance (RDS(on)) of just 190 mΩ at a gate-source voltage of 10 V. This low RDS(on) is a direct benefit of the CoolMOS CFDA technology, which allows for a smaller chip size and superior switching performance compared to standard planar MOSFETs. The low resistance translates to minimized conduction losses, leading to cooler operation and higher overall system efficiency, particularly under full load conditions.
Equally critical is its switching performance. The device features low internal capacitances (Ciss, Coss, Crss) and an optimized body diode, which contribute to reduced switching losses and smoother turn-on/turn-off characteristics. This allows for operation at higher switching frequencies, enabling designers to shrink the size of magnetic components like transformers and inductors, thereby increasing power density. Furthermore, the robust design ensures excellent resilience against avalanche events and a high degree of dv/dt capability, enhancing system ruggedness and longevity.
Key Application Domains
The performance profile of the IPP60R190C6 makes it ideally suited for a wide array of high-performance applications. Its primary domain is in switch-mode power supplies (SMPS), including server and telecommunication power units, where efficiency standards like 80 Plus Titanium are mandatory. It is also a perfect fit for power factor correction (PFC) stages, both in interleaved and single-phase boost configurations, where its fast switching and low losses are crucial for achieving high power factor and efficiency.
Beyond PFC and SMPS, this transistor finds significant use in industrial systems such as motor drives, inverters for solar energy, and welding equipment. Its high voltage rating and robustness make it reliable in harsh environments. Additionally, it is employed in lighting applications, including high-brightness LED drivers, where efficient power conversion is key to thermal management and performance.
The Infineon IPP60R190C6 CoolMOS transistor stands out as a premier choice for designers pushing the boundaries of efficiency and power density. Its superior blend of ultra-low on-resistance, fast switching speed, and inherent ruggedness addresses the core challenges in modern power conversion. By enabling smaller, cooler, and more efficient designs, it empowers innovation across industries from computing and telecom to industrial automation and renewable energy.
Keywords:
1. CoolMOS Technology
2. Low On-State Resistance (RDS(on))
3. High-Efficiency Power Conversion
4. Switch-Mode Power Supply (SMPS)
5. Power Factor Correction (PFC)
